

#Jewelery ion bonding technique series
Materials science and process technology series (2nd ed.). Handbook of deposition technologies for films and coatings : science, technology and applications. Schott Series on Glass and Glass Ceramics. Thin Films on Glass (Schott Series on Glass and Glass Ceramics). OL 7614013M – via University of North Texas Digital Library. Handbook of Plasma Immersion Ion Implantation and Deposition (1st ed.). Mattox of Sandia National Laboratories in 1964. The ion plating process was first described in the technical literature by Donald M. Uniformity of plating not always consistent.Increased variables to take into account when compared to other techniques.Improved chemical reactions when supplying plasma and energy to surface of the bombarding species.Flexibility with the level of ion bombardment.More energy available on the surface of the bombarding species, resulting in more complete bonding.

Better surface coverage than other methods ( Physical vapor deposition, Sputter deposition).Ion plating is used to deposit hard coatings of compound materials on tools, adherent metal coatings, optical coatings with high densities, and conformal coatings on complex surfaces. By using a reactive gas or vapor in the plasma, films of compound materials can be deposited.


The latter ion plating configuration is often called Ion Beam Assisted Deposition (IBAD). Ion plating can be done in a plasma environment where ions for bombardment are extracted from the plasma or it may be done in a vacuum environment where ions for bombardment are formed in a separate ion gun. The energetic particles used for bombardment are usually ions of an inert or reactive gas, or, in some cases, ions of the condensing film material ("film ions"). The depositing material may be vaporized either by evaporation, sputtering (bias sputtering), arc vaporization or by decomposition of a chemical vapor precursor chemical vapor deposition (CVD). In ion plating the energy, flux and mass of the bombarding species along with the ratio of bombarding particles to depositing particles are important processing variables.
